Journal Of Semiconductors

SCIE

國際簡稱：J SEMICOND 參考譯名：半導(dǎo)體學(xué)報(bào)

主要研究方向：PHYSICS, CONDENSED MATTER 非預(yù)警期刊審稿周期：

《半導(dǎo)體學(xué)報(bào)》(Journal Of Semiconductors)是一本由Institute of Physics Publishing出版的以PHYSICS, CONDENSED MATTER為研究特色的國際期刊，發(fā)表該領(lǐng)域相關(guān)的原創(chuàng)研究文章、評論文章和綜述文章，及時(shí)報(bào)道該領(lǐng)域相關(guān)理論、實(shí)踐和應(yīng)用學(xué)科的最新發(fā)現(xiàn)，旨在促進(jìn)該學(xué)科領(lǐng)域科學(xué)信息的快速交流。該期刊是一本未開放期刊，近三年沒有被列入預(yù)警名單。

4區(qū) 中科院分區(qū)
Q2 JCR分區(qū)
115 年發(fā)文量
4.8 IF影響因子
未開放 是否OA
12 issues/year 出版周期
English 出版語言

Founded in 1980, it is an academic journal sponsored by the Chinese Society of Electronics and the Institute of Semiconductors of the Chinese Academy of Sciences. It reports on the latest scientific research achievements and technological progress in semiconductor physics, semiconductor science and technology, and related scientific and technological fields, including semiconductor superlattice and microstructure physics, semiconductor material physics, growth and property testing of new semiconductor materials including quantum dots and quantum wires, semiconductor device physics, CAD design and development of new semiconductor devices and integrated circuits, new processes, semiconductor optoelectronic devices and optoelectronic integration, thin film growth processes, properties and applications related to semiconductor devices, etc. This journal is different from physics and electronics journals in that it focuses on semiconductors and related materials, covering physics, materials, devices, applications, research, and technological development. It is a comprehensive academic journal that spans both physics and information science disciplines. Published articles in both Chinese and English in the Journal of Semiconductors. The Journal of Semiconductors has been indexed by four major search systems in the world, including the American Engineering Index (EI), Chemical Abstracts (CA), Scientific Abstracts (SA), and Russian Abstracts Journal (パЖ).

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Journal Of Semiconductors期刊信息

ISSN：1674-4926
出版語言：English
是否OA：未開放
E-ISSN：1674-4926
出版地區(qū)：PEOPLES R CHINA
是否預(yù)警：否
出版商：Institute of Physics Publishing
出版周期：12 issues/year
開源占比：0
Gold OA文章占比：0.00%
OA被引用占比：0
出版國人文章占比：0
出版撤稿占比：
研究類文章占比：68.70%

Journal Of Semiconductors CiteScore評價(jià)數(shù)據(jù)（2024年最新版）

CiteScore

SJR

SNIP

CiteScore 指數(shù)

6.7

0.856

0.799

學(xué)科類別	分區(qū)	排名	百分位
大類：Physics and Astronomy 小類：Condensed Matter Physics	Q1	84 / 434	80%
大類：Physics and Astronomy 小類：Electronic, Optical and Magnetic Materials	Q1	66 / 284	76%
大類：Physics and Astronomy 小類：Electrical and Electronic Engineering	Q1	185 / 797	76%
大類：Physics and Astronomy 小類：Materials Chemistry	Q2	81 / 317	74%

名詞解釋：CiteScore 是衡量期刊所發(fā)表文獻(xiàn)的平均受引用次數(shù)，是在 Scopus 中衡量期刊影響力的另一個(gè)指標(biāo)。當(dāng)年CiteScore 的計(jì)算依據(jù)是期刊最近4年（含計(jì)算年度）的被引次數(shù)除以該期刊近四年發(fā)表的文獻(xiàn)數(shù)。例如，2022年的 CiteScore 計(jì)算方法為：2022年的 CiteScore =2019-2022年收到的對2019-2022年發(fā)表的文件的引用數(shù)量÷2019-2022年發(fā)布的文獻(xiàn)數(shù)量注：文獻(xiàn)類型包括：文章、評論、會議論文、書籍章節(jié)和數(shù)據(jù)論文。

Journal Of Semiconductors中科院評價(jià)數(shù)據(jù)

中科院 2023年12月升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	物理與天體物理	4區(qū)	PHYSICS, CONDENSED MATTER 物理：凝聚態(tài)物理	4區(qū)

中科院 2022年12月升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	物理與天體物理	4區(qū)	PHYSICS, CONDENSED MATTER 物理：凝聚態(tài)物理	4區(qū)

中科院 2021年12月舊的升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	物理與天體物理	4區(qū)	PHYSICS, CONDENSED MATTER 物理：凝聚態(tài)物理	4區(qū)

中科院 2021年12月基礎(chǔ)版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	物理	4區(qū)	PHYSICS, CONDENSED MATTER 物理：凝聚態(tài)物理	4區(qū)

中科院 2021年12月升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	物理與天體物理	4區(qū)	PHYSICS, CONDENSED MATTER 物理：凝聚態(tài)物理	4區(qū)

中科院 2020年12月舊的升級版

Top期刊	綜述期刊	大類學(xué)科		小類學(xué)科
否	否	物理與天體物理	4區(qū)	PHYSICS, CONDENSED MATTER 物理：凝聚態(tài)物理	4區(qū)

Journal Of Semiconductors JCR評價(jià)數(shù)據(jù)（2023-2024年最新版）

按JIF指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：PHYSICS, CONDENSED MATTER	ESCI	Q2	22 / 79	72.8%

按JCI指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：PHYSICS, CONDENSED MATTER	ESCI	Q2	37 / 79	53.8%

Journal Of Semiconductors歷年數(shù)據(jù)統(tǒng)計(jì)

影響因子

中科院分區(qū)

Journal Of Semiconductors中國學(xué)者發(fā)文選摘

1、Electromechanical and photoelectric properties of a novel semiconducting Janus InGaSSe monolayer
Author: Zhong, Li; Li, Xiaobao; Wang, Wei; Xiao, Xinle

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/012701
2、Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40 degrees-twisted bilayer WS2
Author: Zhao, Siwen; Shao, Gonglei; Han, Zheng Vitto; Liu, Song; Zhang, Tongyao

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/012001
3、The twisted two-dimensional ferroelectrics
Author: Zhang, Xinhao; Peng, Bo

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011002
4、Review of phonons in moire superlattices
Author: Li, Zhenyao; Lai, Jia-Min; Zhang, Jun

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011902
5、75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique
Author: Li, Xiuli; Zhu, Yupeng; Liu, Zhi; Peng, Linzhi; Liu, Xiangquan; Niu, Chaoqun; Zheng, Jun; Zuo, Yuhua; Cheng, Buwen

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/012301
6、Interface engineering in two-dimensional heterostructures towards novel emitters
Author: Li, Hua; Ling, Jinyang; Lin, Jiamin; Lu, Xin; Xu, Weigao

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011001
7、Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moire superlattices
Author: Huang, Xinyu; Han, Xu; Dai, Yunyun; Xu, Xiaolong; Yan, Jiahao; Huang, Mengting; Ding, Pengfei; Zhang, Decheng; Chen, Hui; Laxmi, Vijay; Wu, Xu; Liu, Liwei; Wang, Yeliang; Xu, Yang; Huang, Yuan

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011901
8、Interaction of moire excitons with cavity photons in two-dimensional semiconductor hetero-bilayers
Author: Gao, Yuchen; Ye, Yu

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011903